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VN2222 - N-Channel Enhancement-Mode Vertical DMOS FETs

Features

  • ❏ Free from secondary breakdown ❏ Low power drive requirement ❏ Ease of paralleling ❏ Low CISS and fast switching speeds ❏ Excellent thermal stability ❏ Integral Source-Drain diode ❏ High input impedance and high gain.

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Datasheet Details

Part number VN2222
Manufacturer Supertex Inc
File Size 74.13 KB
Description N-Channel Enhancement-Mode Vertical DMOS FETs
Datasheet download datasheet VN2222 Datasheet

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VN2222LL N-Channel Enhancement-Mode Vertical DMOS FETs
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com VN2222 VN2224 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS 220V 240V RDS(ON) (max) 1.25Ω 1.25Ω ID(ON) (min) 5.0A 5.0A Order Number / Package TO-92 — VN2224N3 20-Pin C-Dip VN2222NC — High Reliability Devices See pages 5-4 and 5-5 for MILITARY STANDARD Process Flows and Ordering Information. Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices.
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